Researchers demonstrate 2D transistor circuits with subpicowatt static power

Researchers reporting in Nature demonstrated complementary transistor circuits using atomically thin semiconductors and a transferable single-crystal titanium dioxide insulating layer. The circuits achieved subpicowatt static power consumption, high voltage gain and large noise margins in laboratory devices. The team fabricated and transferred 3-inch dielectric layers to create cleaner interfaces that reduce charge trapping and improve control of transistor switching. Tests included both n-type and p-type devices, enabling complementary circuits. Devices with channel lengths of about 50 nm retained strong switching characteristics; operation at a 10 nm gate length and 0.3 V was supported by simulations.