# Researchers demonstrate 2D transistor circuits with subpicowatt static power

_Published Thursday, November 12, 2026 at 6:11 PM EST · Science · Latest · Tier 2 — Notable_

Researchers reporting in Nature demonstrated complementary transistor circuits using atomically thin semiconductors and a transferable single-crystal titanium dioxide insulating layer. The circuits achieved subpicowatt static power consumption, high voltage gain and large noise margins in laboratory devices.

The team fabricated and transferred 3-inch dielectric layers to create cleaner interfaces that reduce charge trapping and improve control of transistor switching. Tests included both n-type and p-type devices, enabling complementary circuits. Devices with channel lengths of about 50 nm retained strong switching characteristics; operation at a 10 nm gate length and 0.3 V was supported by simulations.

## Sources

- [Nature](https://www.nature.com/articles/s41586-026-11272-2)

---
Canonical: https://techandbusiness.org/newswire/41_iKDDv6cND5bCcTEHjSZ
Published: 2026-11-12T23:11:58.056Z
Story chronology: 2026-11-11T00:00:00.000Z
Retrieved: 2026-11-13T00:49:57.989Z
Publisher: Tech & Business (techandbusiness.org)