Infineon demonstrates power devices on 300-millimeter SiC wafers

Infineon says it processed 300-millimeter silicon carbide wafers into functional power devices at its Villach fab in Austria using existing silicon manufacturing equipment. The company describes the result as a feasibility milestone in a full-scale semiconductor manufacturing environment. The larger wafers offer 2.3 times more chips per wafer than 200-millimeter wafers, Infineon says. Silicon carbide supports power conversion in applications including vehicles, renewable energy and AI data centers. At Dresden, the company also demonstrated its Cold Split wafer-separation process on the larger material, reducing material loss and processing time compared with wire sawing. Infineon will determine technology and production ramp timing with customers and partners while continuing its 200-millimeter roadmap.