Study reports graphene growth at 300°C with cerium oxide

A joint Tohoku University and Queen Mary University of London team reported synthesizing graphene-based materials at 300°C using acetylene gas over a cerium oxide surface. The source says conventional graphene production can require temperatures as high as 900°C. By changing chemical-vapor-deposition temperature, the team produced graphene quantum dots, aggregated graphene and porous graphene at different temperatures. The researchers say acetylene can be derived from industrial waste gases, biomass and recycled plastics.