ASML and chipmakers outline larger-mask High-NA EUV roadmap
Image: Primary ASML and TSMC announced an initiative to move advanced chip production from 6-inch photomasks to a 12-inch format, with Samsung joining the effort, according to the report.
The stated plan calls for a 12-inch mask pilot line by 2031 and 12-inch High-NA EUV systems in advanced-node production by 2033. Samsung is described as targeting High-NA EUV use in DRAM manufacturing from 2028, while TSMC is slated to follow in 2030. Intel has already run more than one million wafers through its High-NA EUV tools, the report said.
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