China's CXMT Eyes Second Beijing Fab To Fight Memory Shortage

China's ChangXin Memory Technologies is negotiating with the Beijing Economic-Technological Development Area and state-linked investment groups to finance a second fabrication plant in Beijing, the company said. The proposed facility in Yizhuang would be the company's third 12-inch wafer fab, adding to existing plants in Hefei and Beijing that together produce roughly 200,000 wafers per month. Constructing a new DRAM facility typically requires an investment exceeding $10 billion. CXMT has compressed the typical two-year cleanroom construction window to approximately 12 months. The expansion aims to bolster China's semiconductor manufacturing capability amid soaring global demand for computer memory. The vast majority of the new plant's output will be consumed domestically by Chinese hyperscale cloud providers, smartphone makers, advanced robotics, and artificial intelligence research laboratories.